Diode/Bridge Rectifier

-

This standard rectifier is suitable for general purpose low power applications.

Common cathode, 200V, 20A, VF=1V@10A

1000V, 1.5A, [email protected]

I(AV) 8 VRRM(V) 40 IFsM(A) 180 VFM(V) 0.55 VFMI(AV)(A) 8 IRM@VRRM(μA) 1

GBP306S-B1-0000HF

Diode configuration: Independent DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 8A Forward voltage drop (Vf): 1.05V@8A Reverse current (Ir): 10uA@200V Reverse recovery time ( trr): 35ns Operating temperature: -55℃~+175℃@(Tj)

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low voltage, high frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low voltage, high frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.