Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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onsemi (Ansemi)
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onsemi (Ansemi)
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This device includes two custom N-channel MOSFETs in a dual Power 33 (3mm X 3mm MLP) encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and sync MOSFET (Q2) provide the best power efficiency.
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APM (Jonway Microelectronics)
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Littelfuse (American Littelfuse)
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Wuxi Unisplendour
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BLUE ROCKET (blue arrow)
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DIODES (US and Taiwan)
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PNP, Vceo=-65V, Ic=-100mA
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 85 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 4.5/5 Continuous Drain Current ID (A) 135
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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The MJL3281A and MJL1302A power transistors are suitable for high-power audio, disk head positioners, and other linear applications.
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KY (Han Kyung Won)
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30A Standard SCRs IT(RMS):30A VGT: 1.5V VDRM VRRM:1600V TJ:-40-125℃
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FOSAN (Fuxin)
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Field Effect Transistor (MOSFET) N+N Ditch VDSS:30V ID:8A
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YANGJIE (Yang Jie)
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YJG20N06A-F1-0100HF
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VBsemi (Wei Bi)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 10.5/14 Continuous Drain Current ID (A) 12
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