Triode/MOS tube/transistor/module

N-channel, 600V, 10.8A, 299mΩ@10V

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 200mA Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 100@10mA, 1V PNP,Vceo=- 40V,Ic=-0.2A

N-channel, 100V, 57A, 23mΩ@10V

N-channel, Vce=600V, Ic=40A, Vce(on)=1.72V

Double NPN

N-channel, 250V, 100mA, 14Ω@10V