Triode/MOS tube/transistor/module
Wuxi Unisplendour
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Wuxi Unisplendour
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JUNSHINE (Junshine Technology)
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Jilin Huawei
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CJ (Jiangsu Changdian/Changjing)
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VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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P-channel, -60V, -2.1A
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ROHM (Rohm)
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CJ (Jiangsu Changdian/Changjing)
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VISHAY (Vishay)
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MICROCHIP (US Microchip)
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Slkor (Sakor Micro)
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GOFORD (valley peak)
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Crystal Conductor Microelectronics
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onsemi (Ansemi)
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Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
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BORN (Born Semiconductor)
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 85 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 4.2/5 Continuous Drain Current ID (A) 140
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