Triode/MOS tube/transistor/module

NPN, Vceo=300V, Ic=500mA

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

-N-MOS 30V 10A

N-Channel 150V 0.2A 0.5W

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.