Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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CJ (Jiangsu Changdian/Changjing)
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PNP, Vceo=100V, Ic=5A
Təsvir
TECH PUBLIC (Taizhou)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.
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PSI (Baolixin)
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TECH PUBLIC (Taizhou)
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CJ (Jiangsu Changdian/Changjing)
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onsemi (Ansemi)
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This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
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PIP (Li Jun)
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DIODES (US and Taiwan)
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ROHM (Rohm)
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VBsemi (Wei Bi)
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Infineon (Infineon)
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APEC (Fuding)
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ST (STMicroelectronics)
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VBsemi (Wei Bi)
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UMW (Friends Taiwan Semiconductor)
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VBsemi (Wei Bi)
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