Triode/MOS tube/transistor/module

N-channel, 600V, 10A, 750mA@10V

IC(A) 0.5 VCEO(V) 25 hFE(β) 120-400 fT(MHZ) 150 VCBO(V) 40 VCE(sat)(W) 0.6 Type nPN

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Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -40 VGS(th)(v) -1.8 RDS(ON)(m?)@4.178V 18 Qg(nC) @4.5V 30 QgS(nC) 1.2 Qgd(nC) 11 Ciss(pF) 1380 Coss(pF) 280 Crss(pF) 217