Triode/MOS tube/transistor/module

This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses. This IGBT is ideal for UPS and solar applications. This device integrates a soft, fast combined encapsulation freewheeling diode with low forward voltage.

Type(NPN)/VCBO60(V)/VCEO40(V)/VEBO 6(V)/IC0.2(A)/hFE40~300/fT300(MHz)

NPN

These N-channel logic level MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 160V Collector current (Ic): 600mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 100@10mA, 5V Hfe=100-200