Triode/MOS tube/transistor/module

P channel

Type N VDS(V) 100V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 100mΩ ID(A) 10A

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

P groove -60V -15A

This N-channel MOSFET is designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery performance.

N-channel, 55V, 3.1A, 65mΩ@10V

Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 60V Power (Pd): 60W On-resistance (RDS(on)@Vgs,Id): 7.2mΩ@10V, 20A threshold voltage (Vgs(th)@Id): 1.6V@250μA Gate charge (Qg@Vgs): 32nC@10V Input capacitance (Ciss@Vds): 2.497nF@30V, Vdss=30V Id=60A Rds=7.2mΩ, work Temperature: -55℃~+150℃@(Tj)