Triode/MOS tube/transistor/module

N-channel, 650V, 5A

This high voltage NPN bipolar transistor is suitable for general purpose amplifier applications. This device uses TO-92 encapsulation.

P-channel, 60V, 4A, 120 milliohms.

This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) are complementary devices.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 300mW DC Current Gain (hFE@Ic,Vce): 110@2mA,5V

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Type N VDSS(V) 30 VGS(V) 12 VTH(V) 0.4 IDS36°C(A) 5.8 RDS(Max) 33 PD36°C(W) 1.25

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -29A Power (Pd): 25W On-Resistance (RDS(on)@Vgs,Id): 11.0mΩ@10V,- 29A threshold voltage (Vgs(th)@Id): -1.5V@250uA P-channel, -30V, -32A, 11.0mΩ@-10V

[Changdian Quality | Trustworthy] Triac 6A/600V

NPN, Vceo=80V, IC=0.5A, PD=0.625W