Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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Infineon (Infineon)
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N-channel, 55V, 110A, 8mΩ@10V For this material, pay attention to the maximum foot width in the specification book of the mall. There are two specifications on the official website of this material, and the size of one specification book is recommended to be too small.
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onsemi (Ansemi)
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This P-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
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Infineon (Infineon)
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NCE (Wuxi New Clean Energy)
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N-channel, 20V, 6A, 20mΩ@4.5V; same function as SI2300/SI2302, with lower internal resistance and higher current.
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Infineon (Infineon)
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DIODES (US and Taiwan)
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Dual NPN Pre-biased, 50V, 100mA
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VBsemi (Wei Bi)
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FH (Feng Hua)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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MATSUKI (pine wood)
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NPN,Vceo=60V,Ic=1A
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TECH PUBLIC (Taizhou)
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ElecSuper (Jingxin Micro)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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LGE (Lu Guang)
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