Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 4.4 VGS(th)(v) 2 RDS(ON)(m?)@4.107V 80 Qg(nC)@4.5V - QgS(nC) 2.5 Qgd(nC) 3 Ciss(pF) 760 Coss(pF) 46 Crss(pF) 26

2SB1124/2SD1624 is a bipolar transistor, (-)50V, (-)3A, low saturation voltage, (PNP)NPN single PCP, for high current switching applications.

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 10A Power (Pd): 3W On-Resistance (RDS(on)@Vgs,Id): 57mΩ@10V,5A Threshold Voltage ( Vgs(th)@Id): 1.8V@250uA Gate charge (Qg@Vgs): 8.5nC@10V Input capacitance (Ciss@Vds): 0.525nF@30V, Vds=60V Id=10A Rds=57mΩ, operating temperature : -55℃~+150℃@(Tj) DFN3*3encapsulation;

Type N VDSS(V) 650 ID@TC=96?C(A) 4 PD@TC=96?C(W) 23.3 VGS(V) ±30 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.76V -