Triode/MOS tube/transistor/module

NPN,Vceo=60V,Ic=1A

NPN,Vceo=60V,Ic=1A

Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 21mΩ ID(A) 20A

Nch VDS = 30V RDS(ON) = 20mΩ@VGS=10V

This N-channel small-signal MOSFET is produced using ON Semiconductor's proprietary high-cell-density DMOS technology designed to minimize on-resistance while providing robust, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver up to 2A of pulsed current, especially for low voltage, low current applications.

Type N VDSS(V) 60 ID@TC=83?C(A) 50 PD@TC=83?C(W) 136 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.63V -

NPN, Vceo=20V, Ic=1A

This bipolar power transistor is suitable for low voltage, low power and high gain audio amplifier applications.

MOS, TO-252, P-channel, -60V, -30A, 36mΩ (Max), 42W