Triode/MOS tube/transistor/module

Dual P-channel, -60V, -3.2A, 0.064Ω@-10V

VCES(V) 1200 IC(A)@176℃ 40 VCE(sat)(V) 1.75 E(off)(mj) 1.65 Vf(V) 1.8

Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 7.2 On-Resistance (mΩ) 14 Input Capacitance (Ciss) 1440 Reverse Transfer Capacitance Crss (pF) 30 Gate Charge (Qg ) 28

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 60A Power (Pd): 72W On-Resistance (RDS(on)@Vgs,Id): 5.0mΩ@4.5V, 20A Threshold Voltage (Vgs(th)@Id): 0.7V@250uA Gate Charge (Qg@Vgs): [email protected] Input Capacitance (Ciss@Vds): 2.8nF@15V , Vds=20V Id=60A Rds=5.0mΩ ,Working temperature: -55℃~+150℃@(Tj) DFN3*3encapsulation;

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

NPN,Vceo=25V,Ic=500mA

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 160A Power (Pd): 91W On-Resistance (RDS(on)@Vgs,Id: 3.5mΩ@10V, 20A Threshold Voltage ( Vgs(th)@Id): 3.0@250uA Gate charge (Qg@Vgs) 66nC@10V Input capacitance (Ciss@Vds): 3.7nF@50V, Vds=100v Id=160A Rds=3.5mΩ, operating temperature: - 55℃~+150℃@(Tj)

N-channel, 150V, 5.4A, 80mΩ@10V

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of the UniFET FRFET MOSFET is enhanced due to lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

This Insulated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses. The IGBT is ideal for UPS and solar applications. The device combines a soft and fast combined encapsulation freewheeling diode with low forward voltage.

PNP