Triode/MOS tube/transistor/module

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N groove 650V 9A

N-channel 50V 0.2A

N-channel, 60V, 4.6A, 90mΩ@10V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 40V Collector Current (Ic): 200mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 100@10mA,1V 1AM 100-300 NPN ,Vceo=40V,Ic=0.2A,hfe=100~300,

Field Effect Transistor (MOSFET) Type: Dual P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 14A Power (Pd): 3.6W On-Resistance (RDS(on)@Vgs,Id): 10mΩ@10V, 8A Threshold voltage (Vgs(th)@Id): 1.5V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 1.65nF@15V , Vds=30V Id= 14A Rds=10mΩ, working temperature: -55℃~+150℃@(Tj) ;

ZVP2106GTA standard parameter Vth: 3.0

This dual PNP bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-363/SC-88 encapsulation and is suitable for low power surface mount applications.

PNP, 40V, 0.6A, SOT323