Triode/MOS tube/transistor/module

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 60V, current: 55A, 10V internal resistance (Max): 0.01Ω, 4.5V internal resistance (Max): 0.018Ω, power: 80W

Type NPN IC(A) 0.5 VCBO(V) 40 VCEO(V) 25 VEBO(V) 5 VCE(sat)(V) 0.6

N-channel, 100V, 0.09A, 6Ω@10V. Among the models, "XTSA1" is the original internal model.

Configuration Single Type N-Ch VDS(V) 80 VGS(V) 25 ID(A)Max. 200 VGS(th)(v) 3 RDS(ON)(m?)@4.493V - Qg(nC)@4.5V - QgS(nC) 31 Qgd(nC) 75 Ciss(pF) 8154 Coss(pF) 1029 Crss(pF) 650

N-channel NexFET power MOSFET. 8-VSON-CLIP-55 to 150

CSD17311Q5 30V, N-Channel NexFET MOSFET™, Single SON5x6, 2.3mΩ