Triode/MOS tube/transistor/module

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

This dual NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-363/SC-88 encapsulation and is suitable for low power surface mount applications.

Configuration Dual Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -5.8 VGS(th)(v) -1.1 RDS(ON)(m?)@4.317V 60 Qg(nC) @4.5V 11.6 QgS(nC) 1.3 Qgd(nC) 2.5 Ciss(pF) 625 Coss(pF) 100 Crss(pF) 60

Drain-source voltage (V) 30 Continuous drain current (Id) (A) 5.6 Threshold voltage (V) 1.5 Power (W) 1.2 On-resistance 10V (Ω) 27 Input capacitance (pF) 535

Type: P-channel Drain-source voltage (Vdss): 20V Continuous Drain current (Id): 6.5A Power (Pd): 1.7W On-resistance (RDS(on)@Vgs,Id: 16mΩ@4.5V, 4.1A Threshold voltage (Vgs(th)@Id): 0.7V@250uA Gate charge (Qg@Vgs): 7.8nC@4V Input capacitance (Ciss@Vds): 0.980nF@4V ,Vds=20v Id=6.5A Rds= 16mΩ, working temperature: -55℃~+150℃@(Tj) SOT-23-3encapsulation;