Triode/MOS tube/transistor/module

PNP, Vceo=-60V, Ic=-3A, hfe=100~200

N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 12A Power (Pd): 2W On-resistance (RDS(on)Max@Vgs,Id): 14mΩ@10V, 8A

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.