Triode/MOS tube/transistor/module
Cmos (Guangdong Field Effect Semiconductor)
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LGE (Lu Guang)
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onsemi (Ansemi)
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The MJB42C is a 100 V PNP bipolar complementary power transistor. Complementary NPN is MJB41C.
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BLUE ROCKET (blue arrow)
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DIODES (US and Taiwan)
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Potens (Bosheng Semiconductor)
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ROHM (Rohm)
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CBI (Creation Foundation)
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DIODES (US and Taiwan)
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NPN,Vceo=40V,Ic=600mA
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BL (Shanghai Belling)
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N-channel, 19.5V, 6A
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SHIKUES (Shike)
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MICROCHIP (US Microchip)
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Infineon (Infineon)
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UTC(Youshun)
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MOT (Renmao)
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Voltage VDSS450V, conduction resistance Rds0.5 ohms, charge Qg55nC, current ID11A
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LONTEN (Longteng Semiconductor)
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CJ (Jiangsu Changdian/Changjing)
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onsemi (Ansemi)
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The device contains two dedicated N-channel MOSFETs with dual MLP encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.
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TECH PUBLIC (Taizhou)
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onsemi (Ansemi)
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This high voltage PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-223 encapsulation and is suitable for low power surface mount applications.
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