Triode/MOS tube/transistor/module
Infineon (Infineon)
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onsemi (Ansemi)
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Single N-Channel 100 V Power MOSFET
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NCE (Wuxi New Clean Energy)
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DIODES (US and Taiwan)
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AGM-Semi (core control source)
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VBsemi (Wei Bi)
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Xin Feihong
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MSKSEMI (Mesenco)
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Type: P-channel Drain-source voltage (Vdss): -20V Continuous drain current (Id): -3.3A Power (Pd): 1.5W On-resistance (RDS(on)
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VISHAY (Vishay)
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Sinopower (large and medium)
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onsemi (Ansemi)
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This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
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Infineon (Infineon)
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N-channel, 500V, 2.5A, 3Ω@10V
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ROHM (Rohm)
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NCE (Wuxi New Clean Energy)
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Infineon (Infineon)
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TECH PUBLIC (Taizhou)
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CBI (Creation Foundation)
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VBsemi (Wei Bi)
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Infineon (Infineon)
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ROHM (Rohm)
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