Triode/MOS tube/transistor/module
Infineon (Infineon)
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onsemi (Ansemi)
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Infineon (Infineon)
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HUASHUO (Huashuo)
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Samwin (Semipower)
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VBsemi (Wei Bi)
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Infineon (Infineon)
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minos (Minos)
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TMC (Taiwan Mao)
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Type N VDS(V) 20V VGS(V) ±12V Vth(V) 0.7V RDS(ON)(mΩ) 20mΩ ID(A) 8A
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TMC (Taiwan Mao)
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Infineon (Infineon)
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P-channel, -12V, -4.3A, 50mΩ@-4.5V
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DIODES (US and Taiwan)
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Jilin Huawei
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FUXINSEMI (Fuxin Senmei)
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Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 80MHz Operating temperature: -55~+150℃@(Tj)
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YFW (You Feng Wei)
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VBsemi (Wei Bi)
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Hottech (Heketai)
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onsemi (Ansemi)
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Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
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ST (STMicroelectronics)
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