Triode/MOS tube/transistor/module

N-channel 650V 20A

N-channel, 40V, 5A, 35mΩ@10V

N-channel Power Trench MOSFET, 100V, 32A, 36 mΩ, this latest shielded gate PowerTrench MOSFET has smaller QSYNC and soft reverse recovery intrinsic body diode performance, fast switching speed, which can greatly improve the performance of synchronous rectification efficiency.

P-channel, 30V, 37A, 10mΩ@10V

Power MOSFETs, Complementary, 20 V, +5.5/-4.2 A, ChipFET

N+N channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 8A Power (Pd): 5W On-resistance (RDS(on)Max@Vgs,Id): 115mΩ@10V, 3A

30V N-Channel MOSFET 8-VSONP -55 to 150

Configuration Single+ESD Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -5.5 VGS(th)(v) -0.75 RDS(ON)(m?)@4.87V 44 Qg( nC)@4.5V 6.2 QgS(nC) 2.2 Qgd(nC) 1.8 Ciss(pF) 575 Coss(pF) 98 Crss(pF) 75