Triode/MOS tube/transistor/module

This N-channel MOSFET is produced using the advanced PowerTrench process. The combination of advances in silicon and Dual Cool encapsulation technology provides the lowest rDS(on) while maintaining excellent switching performance with very low junction-to-ambient thermal resistance.

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -3 VGS(th)(v) -1.6 RDS(ON)(m?)@4.131V 120 Qg( nC)@4.5V 3.3 QgS(nC) 1.1 Qgd(nC) 1.1 Ciss(pF) 229 Coss(pF) 42 Crss(pF) 33

Field effect configuration: P-channel VDSS withstand voltage -60V, ID current -14A, RDS(ON) on-resistance 55mR@VGS -10V(MAX), VGS(th) on-voltage -1.0V to -2.5V

150V/12.4A@TC=25℃, 4.3A@Ta=25℃/N-channel