Triode/MOS tube/transistor/module

CSD25310Q2 20V P-Channel NexFET Power MOSFET, CSD25310Q2

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -15 VGS(th)(v) - RDS(ON)(m?)@4.310V 10 Qg(nC)@ 4.5V 72 QgS(nC) 12 Qgd(nC) 16 Ciss(pF) 3500 Coss(pF) 635 Crss(pF) 645

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 82A Power (Pd): 89W On-Resistance (RDS(on)@Vgs,Id): 6.8mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 3.0V@250uA Gate charge (Qg@Vgs): 72nC@10V Input capacitance (Ciss@Vds): 3nF@30V, Vds=60V Id=82A Rds=6.8mΩ, operating temperature : -55℃~+150℃@(Tj)

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

N-channel, 60V, 50A, 10.5mΩ@10V

600V,10A

PNP

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.