Triode/MOS tube/transistor/module
Infineon (Infineon)
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Infineon (Infineon)
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Infineon (Infineon)
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Littelfuse (American Littelfuse)
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Littelfuse (American Littelfuse)
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onsemi (Ansemi)
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RENESAS (Renesas)/IDT
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onsemi (Ansemi)
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Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
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onsemi (Ansemi)
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onsemi (Ansemi)
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This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.
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onsemi (Ansemi)
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DIODES (US and Taiwan)
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onsemi (Ansemi)
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This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
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onsemi (Ansemi)
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ROHM (Rohm)
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Infineon (Infineon)
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Infineon (Infineon)
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Infineon (Infineon)
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