Triode/MOS tube/transistor/module

N-channel, 600V, 7A

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 30V Collector current (Ic): 3A Power (Pd): 500mW DC current gain (hFE@Ic,Vce): 200@1A, 2V GR range (200- 400) NPN