Triode/MOS tube/transistor/module

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

The MJL4281A and MJL4302A bipolar complementary audio power transistors are suitable for high power audio.

N-channel, 600V, 20A, 165mΩ@10V

P-channel, -30V, -3.5A

Semiconductor Transistor Field Effect Transistor MOS tube, SOT-23, N channel, withstand voltage: 20V, current: 4A, 10V internal resistance (Max): 4.5V internal resistance (Max): 0.04Ω, power: 1.25W

This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

P channel -16V -3A