Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -3.4A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 75mΩ@-10V ,-3A threshold voltage Vgs(th)@Id): -1.0V to -2.5V@250uA

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 40 VGS(th)(v) 0.6 RDS(ON)(m?)@4.147V 9.5 Qg(nC)@4.5V 10 QgS(nC) 3.5 Qgd(nC) 4.2 Ciss(pF) 1200 Coss(pF) 185 Crss(pF) 113

Voltage VDSS650V, conduction resistance Rds1.1 ohms, charge Qg28nC, current ID8A

N-Channel, PowerTrench MOSFET, 60V, 62A, 13.5mΩ, This latest shielded gate PowerTrench MOSFET has smaller QSYNC, excellent soft reverse recovery intrinsic body diode performance, fast switching speed, which can greatly improve the performance of synchronous rectification efficiency.

N-channel, Vce=1200V, Ic=15A

N-channel, Vce=650V, Ic=30A

Power MOSFET, 60V, P-Channel, TSOP6

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.