Triode/MOS tube/transistor/module

SMD Transistor Transistor Type: 1 NPN- Pre-bias Power (Pd): 200mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V NPN, Vcc=50V, Io=100mA, Pd= 200mW

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ULQ2003A-Q1 Automotive High Voltage, High Current Darlington Transistor Array

NPN 60V 500mA

N-channel, 600V, 4A

MMDT3906-F2-0000HF

2SC6097 is a bipolar transistor, 60V, 3A, low VCE(sat), NPN single TP/TP-FA, for high current switching applications.

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 19 VGS(th)(v) 1.6 RDS(ON)(m?)@4.149V 32 Qg(nC)@4.5V 4.1 QgS(nC) 1 Qgd(nC) 2.1 Ciss(pF) 360 Coss(pF) 55 Crss(pF) 46