Triode/MOS tube/transistor/module

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N channel

P channel -30V -4.1A

NPN, Vceo=50V, Ic=2A, hfe=120~270

This device is intended for use in general-purpose amplifiers and switches requiring up to 500 mA collector current. From Process 63.

The NTMFS4C302N is a single N-channel power MOSFET with a small footprint for compact designs.

N-channel, 20V, 45A, 6mΩ@4.5V