Triode/MOS tube/transistor/module

NPN

Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.

Triode Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 160V Collector Current (Ic): 600mA Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 120@10mA, 5V NPN,Vceo= 160V,Ic=0.6A,hfe=100-200 silk screen G1

N-channel, Vces=600V, Ic=25A

This transistor is used as an output device for complementary audio amplifiers up to 100 W per channel of music power.

YJL3139KT-F1-0100HF

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 7.0A Power (Pd): 3.1W On-Resistance (RDS(on)@Vgs,Id): 100mΩ@10V,4A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate Charge (Qg@Vgs): 3.57nC@10V Input Capacitance (Ciss@Vds): 0.182nF@50V , Vds=100V Id=7.0A Rds=100mΩ ,Working temperature: -55℃~+150℃@(Tj);

Ultra high voltage MOS tube

This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.