Triode/MOS tube/transistor/module

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 16/23 Continuous Drain Current ID (A) 10

This PNP bipolar transistor is suitable for linear and switching applications. The device features TO-92 encapsulation and is suitable for medium power applications.

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 85 VGS(th)(v) - RDS(ON)(m?)@4.204V 6.4 Qg(nC)@4.5V 20 QgS(nC) 5.8 Qgd(nC) 9.5 Ciss(pF) 2354 Coss(pF) 215 Crss(pF) 175

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 200@100mA, 1V Y1 200-350 NPN, Vceo=25V, Ic=1.5A, hfe=200~350, silk screen Y1

NPN Vceo=50V Io=100mA pre-biased