Triode/MOS tube/transistor/module

A1 file 15-30 withstand voltage 400V, one-way thyristor. Igt=200(uA)

N-channel, 100V, 290A, 2.6mΩ@10V

NPN Vceo=45V Ic=100mA,hfe=110~220(Ic=2mA,Vce=5V)

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Type N VDSS(V) 20 ID@TC=37?C(A) 4 PD@TC=37?C(W) 1.2 VGS(V) ±10 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.17V 40

This N-channel MV MOSFET is produced using the advanced PowerTrench process incorporating shielded gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.