Triode/MOS tube/transistor/module

NPN 400V 4A

Configuration Dual Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 35 VGS(th)(v) 1.8 RDS(ON)(m?)@4.166V 14 Qg(nC)@4.5V - QgS(nC) 2.3 Qgd(nC) 3 Ciss(pF) 620 Coss(pF) 85 Crss(pF) 30

PNP

The MCH6001 is an RF Transistor, 8 V, 150 mA, fT = 16 GHz, NPN dual MCPH6, suitable for high frequency low noise amplifiers.

YJB200G06A-F2-0000HF

N-channel, 500V, 20A, 250mΩ@10V

P-channel, -100V, -3.8A, 150mΩ@-10V

This N-channel small-signal MOSFET is produced using ON Semiconductor's proprietary high-cell-density DMOS technology designed to minimize on-resistance while providing robust, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver up to 2A of pulsed current, especially for low voltage, low current applications.

N-channel 30V 50A

MMDT5551-F2-0000HF