Triode/MOS tube/transistor/module

Automotive power MOSFETs for compact and energy efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

2SB1197-Q-F2-0000HF

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 150 VGS(th)(v) 1.7 RDS(ON)(m?)@4.197V 2.4 Qg(nC)@4.5V 26 QgS(nC) 9.5 Qgd(nC) 11.4 Ciss(pF) 3200 Coss(pF) 680 Crss(pF) 320

RF transistor

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 60V, current: 80A, 10V internal resistance (Max): 0.022Ω, power: 145W

P-channel, -30V, -6.5A, 46mΩ@-10V