Triode/MOS tube/transistor/module

Silicon carbide MOS1200V50mΩ

N channel

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 100V Collector Current (Ic): 1A Power (Pd): 250mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 600mV@1A, 100mA DC current gain (hFE@Ic,Vce): 100@250mA, 10V Characteristic frequency (fT): 150MHz Operating temperature: +150℃@(Tj)