Triode/MOS tube/transistor/module

N-channel, VDSS withstand voltage 30V, ID current 60A, RDON on-resistance 6mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

This P-channel MOSFET is a rugged gate version of the advanced PowerTrench process. It is optimized for power management applications requiring wide gate drive voltage ratings (4.5V – 25V).

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -8.6 VGS(th)(v) -1.6 RDS(ON)(m?)@4.339V 32 Qg( nC)@4.5V 11.5 QgS(nC) 3.5 Qgd(nC) 3.3 Ciss(pF) 1415 Coss(pF) 134 Crss(pF) 102

Type P VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS54°C(A) 5.6 RDS(Max) 80 PD54°C(W) 2.8

NPN 100V 3A

N-channel, 30V, 18A, 4mΩ@10V

PNP, Vceo=-60V, Ic=-1A, hfe=200~400

NPN