Triode/MOS tube/transistor/module

PNP, Vceo=-80V, Ic=-1A, hfe=180~390

NPN, Vceo=40V, Ic=2A

Type: N-Channel Drain-Source Voltage (Vdss): 85V Continuous Drain Current (Id): 280A Power (Pd): 378W On-Resistance (RDS(on)@Vgs,Id): 1.85mΩ@10V,50A Threshold Voltage (Vgs(th)@Id): 3.0V@250uA Gate charge (Qg@Vgs): 140nC@10V Input capacitance (Ciss@Vds): 10.374nF@42V, Vds=85V Id=280A Rds=1.85mΩ, working Temperature: -55℃~+150℃@(Tj)

N-channel, 55V, 4.9A, 50mΩ@10V