Triode/MOS tube/transistor/module

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS 20/-12 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 20/25 Continuous Drain Current ID (A) 40

PNP, Vceo=-45V, Ic=-0.5A

2A, 800V

Type N VDSS(V) 650 ID@TC=97?C(A) 7 PD@TC=97?C(W) 27.9 VGS(V) ±30 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.77V -

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 15A Power (Pd): 35W On-Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 2.5V@250uA Operating temperature: -55 to+150℃@(Tj)