Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 35A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 13mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.5V@250uA N-channel, 40V, 35A, 13mΩ@10V

TSSOP ultra-small volume encapsulation Darlington tube array relay drive stepper motor drive LED digital tube drive

PNP Vceo=-160V Ic=-1A PC=1W

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 50V Collector current (Ic): 100mA Power (Pd): 200mW Collector cut-off current (Icbo): 0.1uA Collector-emitter saturation voltage (VCE(sat )@Ic, Ib): 300mV@100mA, 10mA Operating temperature: -55℃~+150℃@(Tj

Type P+P VDSS(V) -30 ID@TC=49?C(A) -7.1 PD@TC=49?C(W) 2.5 VGS(V) ±20 RDS(on)(m?)Max.@ TC= 25?C VGS=4.29V 40

Configuration Single Type N-Ch VDS(V) 150 VGS(V) 20 ID(A)Max. 10 VGS(th)(v) 1.8 RDS(ON)(m?)@4.399V 260 Qg(nC)@4.5V - QgS(nC) 3.5 Qgd(nC) 3.2 Ciss(pF) 755 Coss(pF) 65 Crss(pF) 18

Triac parameters VDRM/ VRRM 400V RMS ON state current IT(RMS) 0.8A

N-channel 30V 120A

Drain-source voltage (Vdss): 30V Continuous drain current (Id): 68A Power (Pd): 26W On-resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,20A

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 20A Power (Pd): 3.8W On-Resistance (RDS(on)@Vgs,Id): 18mΩ @10V,11A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 8.6nC@10V Input Capacitance (Ciss@Vds): 0.333nF@10V ,Vds=30V Id= 20A Rds=18mΩ, working temperature: -55℃~+150℃@(Tj);

N-channel, 500V, 9A, 0.8Ω@10V

NPN 25W 800V 3A Applications: Designed for Lighting Applications and Low Cost Switch Mode Power Supplies