Triode/MOS tube/transistor/module

N-channel, 400V, 10A

NPN 25V 1.5A

NPN, Vceo=45V, Ic=800mA

NPN 100V 1A

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

P-channel, -12V, -7.1A, 0.035Ω@-4.5V

A1 file 15-30, one-way thyristor.