Triode/MOS tube/transistor/module
ST (STMicroelectronics)
İstehsalçılar
Cmos (Guangdong Field Effect Semiconductor)
İstehsalçılar
MOS, TO-220, N-channel, 600V, 18A, 450mΩ (Max), 300W
Təsvir
STANSON (Statson)
İstehsalçılar
Type P VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS82°C(A) 5 RDS(Max) 80 PD82°C(W) 2.8
Təsvir
AnBon (AnBon)
İstehsalçılar
DIODES (US and Taiwan)
İstehsalçılar
SILAN (Silan Micro)
İstehsalçılar
WINSOK (Weishuo)
İstehsalçılar
Dual N-channel.20V.9.7A.7mΩ
Təsvir
VBsemi (Wei Bi)
İstehsalçılar
JSMSEMI (Jiesheng Micro)
İstehsalçılar
KY (Han Kyung Won)
İstehsalçılar
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3/0.65/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 50
Təsvir
MATSUKI (pine wood)
İstehsalçılar
YANGJIE (Yang Jie)
İstehsalçılar
MMDT4403-F2-0000HF
Təsvir
VBsemi (Wei Bi)
İstehsalçılar
VBsemi (Wei Bi)
İstehsalçılar
onsemi (Ansemi)
İstehsalçılar
The FNB34060T is a Motion SPM 3 module that provides a full-featured, high-performance inverter output stage for AC direct-sensing, BLDC, and PMSM motors. The modules integrate optimized gate drive for the built-in IGBTs to minimize EMI and losses, while also providing several on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting. Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are provided for each phase to support the widest range of control algorithms.
Təsvir
JESTEK (JESTEK)
İstehsalçılar
ST (STMicroelectronics)
İstehsalçılar
ST (STMicroelectronics)
İstehsalçılar
TECH PUBLIC (Taizhou)
İstehsalçılar