Triode/MOS tube/transistor/module

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 100@100mA,1V 100~250 PNP

This PNP bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications.

The RDS(on) of these small surface-mount MOSFETs ensures minimal power loss and energy savings, making them suitable for use in space-sensitive power management circuits. Typical applications for these P-channel small-signal MOSFETs are DC-DC converters and power management in portable and battery-operated products such as computers, printers, PCMCIA cards, cellular and cordless phones.

Type PNP IC(A) -0.3 VCBO(V) -500 VCEO(V) -400 VEBO(V) -6 VCE(sat)(V) -0.2

P-channel, -20V, -4.2A, 53mΩ@-4.5V

P-channel, -50V, -0.13A, same as BSS84, with ESD protection, 2.1Ω@-10V low resistance.

Automotive Power MOSFET, 60V, 155 mΩ, Single N-Channel, Logic Level, SOT?23 AEC-Q101 Qualified MOSFET with Production Part Approval Program (PPAP) capability for automotive applications.

Current 500MA Voltage 45V Magnification 100-250