Triode/MOS tube/transistor/module

N-channel, 650V, 2A

UItraFET devices combine features to deliver benchmark energy efficiency in power conversion applications. These devices are optimized for rDS(on), low ESR, low total charge and Miller gate charge for high frequency DC/DC converters.

MOSFET Type N Drain-Source Voltage (Vdss) (V) 70 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 6.7/7.8 Continuous Drain Current ID (A) 100

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 6A Power (Pd): 2.2W On-Resistance (RDS(on)@Vgs,Id): 32mΩ@10V,5A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 16nC@10V Input capacitance (Ciss@Vds): 1.1nF@20V, Vds=40V Id=6A Rds=32mΩ, operating temperature : -55℃~+150℃@(Tj) DFN3*3encapsulation;

PNP Vceo=-50V Ic=-0.15 PC=0.1W

N-channel 60V 15A