Triode/MOS tube/transistor/module

N-channel, 60V, 75A, 9.1 milliohms.

N channel

N-channel, 20V, 12A, 11.7Ω@4.5V

Type PNP IC(A) -0.6 VCBO(V) -40 VCEO(V) -40 VEBO(V) -5 VCE(sat)(V) 0.75

New product, ULN2803 upgrade product, field effect tube as output tube, lower tube pressure drop, less chip heat generation, better driving performance.

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 170mA Power (Pd): 360mW On-Resistance (RDS(on)@Vgs,Id): 6Ω@10V, 170mA Threshold Voltage ( Vgs(th)@Id): 2V@1mA N-channel, 100V, 0.17A, 6Ω@10V

N channel

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -90 VGS(th)(v) -1.8 RDS(ON)(m?)@4.467V 13 Qg(nC) @4.5V - QgS(nC) 12 Qgd(nC) 32 Ciss(pF) 4066 Coss(pF) 501 Crss(pF) 291

Power MOSFET, 30 V, 38A, Single N-Channel, Ø8FL

2SB1202/2SD1802 is a bipolar transistor, (-)50V (-)5A low saturation voltage; (-0.7)0.5mV max, (PNP)NPN single TP, suitable for high current switching applications.

N-channel, 75V, 7.8A