Triode/MOS tube/transistor/module

SuperFET MOSFETs are the first generation of high-voltage super-junction (SJ) MOSFET families utilizing charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

60V, 1A, NPN transistor, hFE=100-250

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PNP, Vceo=-30V, Ic=-100mA, hfe=220~475

Bipolar (BJT) - single pre-biased) NPN - pre-biased 50V 100mA 250MHz 150mW

Polarity PNP Power Dissipation (W) 0.25 Maximum Collector Current (mA) 600 Collector- Base Voltage (V) 60 Saturation Voltage Drop (V) 0.4 Collector/ Base Current (mA) 150/15 Maximum operating frequency (MHz) 200

P-channel, -100V, -13A, 205mΩ@-10V

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Power MOSFET, 30V, 52A, Single N-Channel, ?8FL