Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, TO-252, P channel, withstand voltage: -30V, current: -120A, 10V internal resistance (Max): 0.0042Ω, 4.5V internal resistance (Max): 0.0065Ω, power: 65W

N-channel, 800V, 1.0?@10V, 10A

N-channel, 55V, 17A, 75mΩ@10V

NPN

N tube 650V 15A TO-220F 280mΩ

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 8.5/14 Continuous Drain Current ID (A) 12