Triode/MOS tube/transistor/module

Collector-emitter breakdown voltage (Vceo): -140V Collector current (Ic): -4A Power (Pd): 3W Collector cut-off current (Icbo): 50nA Collector-emitter saturation voltage (VCE(sat)@Ic ,Ib): 370mV@3A, 300mA DC current gain (hFE@Ic,Vce): 100@1A

P-channel, VDSS withstand voltage 30V, ID current 4.1A, RDON on-resistance 70mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.45-1.0V,

N-channel VDS: 12V ID: 15A