Triode/MOS tube/transistor/module

N-channel, 800V, 6.2A, 1.3Ω@10V

Type: 1 P-channel, P-channel: Drain-source voltage (Vdss): -30V Continuous drain current (Id): -12A On-resistance (RDS(on)@Vgs,Id): 9.5mΩ@-10V, 15mΩ/@-4.5V , threshold voltage (Vgs(th)@Id): -1.0V to -2.5V VDS=VGS,ID=250μA

-20V/-4.8A/P channel

Drain-source voltage (Vdss): 20V Continuous drain current (Id): 0.67A Power (Pd): 0.22W On-resistance (RDS(on)@Vgs,Id): 233mΩ@4.5V,0.5A

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 5.8A Power (Pd): 0.35W On-Resistance (RDS(on)@Vgs,Id): 40Ω@10V, 3.8A Threshold voltage (Vgs(th)@Id): 1.2V@250μA