Triode/MOS tube/transistor/module
Infineon (Infineon)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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This is a 30 V N-channel power MOSFET.
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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N-channel, 80V, 110A, 6.5mΩ@10V
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TOSHIBA (Toshiba)
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YANGJIE (Yang Jie)
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TF (Tuofeng)
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Infineon (Infineon)
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Infineon (Infineon)
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N-channel, 550V, 7.6A, 500mΩ@13V
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Shanghai Chaozhi
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onsemi (Ansemi)
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SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, the SuperFET II MOSFET easy-drive family offers slightly slower rise and fall times than the SuperFET II MOSFET family. This series is identified by an "E" part number suffix to help manage EMI issues and simplify design implementation. For faster switching applications where absolute minimum switching losses must be guaranteed, consider the SuperFET II MOSFET family.
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UTC(Youshun)
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Ruichips (Ruijun Semiconductor)
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N-channel, 60V, 1.5A, 250mΩ@10V
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TOSHIBA (Toshiba)
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7-way driver, a new product, uses a field effect tube as the output tube, the tube pressure drop is lower, the chip generates less heat, and the driving performance is better.
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SHIKUES (Shike)
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YANGJIE (Yang Jie)
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ST (STMicroelectronics)
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SILAN (Silan Micro)
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N-channel, 650V, 12A, 680mΩ@10V
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